idt12s60c 2 nd generation thinq! tm sic schottky diode features ? revolutionary semiconductor material - silicon carbide ? switching behavior benchmark ? no reverse recovery/ no forward recovery ? no temperature influence on the switching behavior ? high surge current capability ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target applications ? breakdown voltage tested at 5ma 2) thinq! 2g diode specially designed for fast switching applications like: ? ccm pfc ? motor drives maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous forward current i f t c <140 c 12 a rms forward current i f,rms f =50 hz 18 surge non-repetitive forward current, sine halfwave i f,sm t c =25 c, t p =10 ms 98 repetitive peak forward current i f,rm t j =150 c, t c =100 c, d =0.1 49 non-repetitive peak forward current i f,max t c =25 c, t p =10 s 410 i2t value i 2 d t t c =25 c, t p =10 ms 48 a 2 s repetitive peak reverse voltage v rrm 600 v diode ruggedness dv/dt d v/ d t v r =0?480v 50 v/ns power dissipation p tot t c =25 c 115 w operating and storage temperature t j , t stg -55 ... 175 c mounting torque m3 and m3.5 screws 60 ncm value v dc 600 v q c 30 nc i f 12 a product summary pg-to220-2-2 type package marking pin 1 pin 2 idt12s60c pg-to220-2-2 d12s60c c a rev. 2.1 page 1 2008-06 -09
idt12s60c parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.3 k/w thermal resistance, junction - ambient r thja leaded - - 62 soldering temperature, wavesoldering only allowed at leads t sold 1.6mm(0.063 in.) from case for 10s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics dc blocking voltage v dc i r =0.16 ma 600 - - v diode forward voltage v f i f =12 a, t j =25 c - 1.5 1.7 i f =12 a, t j =150 c - 1.7 2.1 reverse current i r v r =600 v, t j =25 c - 1.5 160 a v r =600 v, t j =150 c - 6 1600 ac characteristics total capacitive charge q c -30-nc switching time 3) t c - - <10 ns total capacitance c v r =1 v, f =1 mhz - 530 - pf v r =300 v, f =1 mhz -70- v r =600 v, f =1 mhz -70- 4) only capacitive charge occuring, guaranteed by design. values v r =400 v, i f ? i f,max , d i f /d t =200 a/s, t j =150 c 3) t c is the time constant for the capacitive displacement current waveform (independent from t j , i load and di/dt), different from t rr , which is dependent on t j , i load , di/dt. no reverse recovery time constant t rr due to absence of minority carrier injection. 1) j-std20 and jesd22 2) all devices tested under avalanche conditions, for a time periode of 5ms, at 5ma. rev. 2.1 page 2 2008-06-09
idt12s60c 1 power dissipation 2 diode forward current p tot =f( t c ) i f =f( t c ); t j ? 175 c parameter: r thjc(max) parameter. r thjc(max) ; v f(max) 3 typ. forward characteristic 4 typ. forward characteristic in surge current i f =f( v f ); t p =400 s mode parameter: t j i f =f( v f ); t p =400 s; parameter: t j 0 20 40 60 80 100 120 25 50 75 100 125 150 175 200 t c [c] p tot [w] -55 c 25 c 100 c 150 c 175 c 0 10 20 30 40 01234 v f [v] i f [a] 0 5 10 15 20 25 30 35 25 50 75 100 125 150 175 200 t c [c] i f [a] -55 c 25 c 100 c 150 c 175 c 0 20 40 60 80 100 120 140 01234567 v f [v] i f [a] rev. 2.1 page 3 2008-06-09
idt12s60c 5 typ. forward power dissipation vs. 6 typ. reverse current vs. reverse voltage average forward current i r =f( v r ) p f,av =f( i f ), t c =100 c, parameter: d = t p / t parameter: t j 7 transient thermal impedance 8 typ. capacitance vs. reverse voltage z thjc =f( t p ) c =f( v r ); t c =25 c, f =1 mhz parameter: d = t p / t 10 3 10 2 10 1 10 0 10 -1 0 100 200 300 400 500 600 700 v r [v] c [pf] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 t p [s] z thjc [k/w] -55 c 25 c 100 c 150 c 175 c 10 2 10 1 10 0 10 -1 10 -2 10 -3 100 200 300 400 500 600 v r [v] i r [a] 0.1 0.2 0.5 1 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 i f(av) [a] p f(av) [w] rev. 2.1 page 4 2008-06-09
idt12s60c 9 typ. c stored energy 10 typ. capacitance charge vs. current slope e c =f( v r ) q c =f(d i f /d t ) 4) ; t j =150 c; i f ? i f,max 0 10 20 30 40 100 400 700 1000 di f /d t [a/s] q c [nc] 0 5 10 15 0 100 200 300 400 500 600 v r [v] e c [c] rev. 2.1 page 5 2008 -06-09
idt12s60c pg-to220-2-2: outline t c dimensions in mm/inches rev. 2.1 page 6 2008-06-09
rev. 2.1 page 7 2008-06-09
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